A fully 2D, Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFET’s

Klös, A., & Kostka, A. (1995). A fully 2D, Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFET’s. In Simulation of Semiconductor Devices and Processes (pp. 218–221). Springer Vienna. https://doi.org/10.1007/978-3-7091-6619-2_52