Poly(Vinylidenefluoride-trifluoroethylene) P(VDF-TRFE)/semiconductor structure ferroelectric-gate FETs

Abstract

Ferroelectric field effect transistors (FeFETs) composed of P(VDF-TrFE) (Poly(Vinylidenefluoride-Tirfluoroethylene)) thin films and semiconductor substrates show excellent ferroelectric transistor characteristics. Since P(VDF-TrFE) has the ferroelectric polarization as large as those of oxide ferroelectric materials with much lower dielectric constant, it is an ideal material to build FeFETs with the combination to inorganic semiconductor materials. In addition, the process condition to form P(VDF-TrFE) is much milder to underlying semiconducting material compared to oxide ferroelectrics. Therefore, the improvement on the retention characteristics is expected by employing P(VDF-TrFE) ferroelectrics in FeFET instead of oxide ferroelectrics. The potential of P(VDF-TrFE) FeFET is discussed in this chapter.