High density magnetic memory driven by spin transfer torque requires novel materials combining high spin polarization and high uniaxial magnetic anisotropy. In thin films the easy axis should be perpendicular to the film plane. Perpendicularlymagnetized films may also find applications in magnetic memory. This chapter reviews recent developments in Mn-Ga and Mn-Ge based Heusler alloys which can meet these requirements. The zero moment half metallic behavior observed in cubic Mn2Ru0.5Ga is of particular interest. Other crystalline forms of Mn-Ga and Mn-Ge alloys where triangular antiferromagnetism is used to demonstrate exchange bias are also reviewed.
CITATION STYLE
Kurt, H., & Coey, J. M. D. (2016). Magnetic and electronic properties of thin films of Mn-Ga and Mn-Ge compounds with cubic, tetragonal and hexagonal crystal structures. In Springer Series in Materials Science (Vol. 222, pp. 157–191). Springer Verlag. https://doi.org/10.1007/978-3-319-21449-8_7
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