Electro-optical modulating multistack device based on the CMOS-compatible technology of amorphous silicon

Abstract

We report results on a field-effect induced light modulation at λ = 1.55 μm in a high-index-contrast waveguide based on a multisilicon-on- insulator (MSOI) platform. The device is realized with the hydrogenated amorphous silicon (α-Si:H) technology and it is suitable for monolithic integration in a CMOS integrated circuit. The device exploits the free carrier optical absorption electrically induced in the multistack core waveguide. © 2011 Springer Science+Business Media B.V.