The last 19 years have seen intense research made on zinc oxide (ZnO) material mainly due to the ability of converting the natural n-type material into p-type. For a long time, the p-type state was impossible to attain and maintain. The review focuses on ways of improving the doped ZnO material which acts as a channel for nanowire field effect transistor (NWFET) and biosensor. The biosensor has specific binding which is called functionalisation achieved by attaching a variety of compounds on the designated sensing area. Reference electrodes and buffers are used as controllers. Top-down fabrication processes are preferred over bottom-up because they pave way for mass production. Different growth techniques are reviewed and discussed. Strengths and weaknesses of the FET and sensor are also reviewed.
CITATION STYLE
Ditshego, N. M. J. (2019). Zno nanowire field effect transistor for biosensing: A review. Journal of Nano Research, 60, 94–112. https://doi.org/10.4028/www.scientific.net/JNanoR.60.94
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