Heterodyned electrostatic transduction oscillators evade low frequency noise aliasing

Abstract

We recently demonstrated a polarization technique that eliminates the frequency drift due to dielectric charge in MEMS oscillators [1]. In this work we show that these oscillators are also first-order insensitive to low-frequency voltage noise, with potential for significant positive impact on predicted close-to-carrier phase noise performance. Close-to-carrier noise also determines the limits of some resonant sensor applications [2, 3].