Totally solution-processed ferroelectric-gate thin-film transistor

Abstract

We have fabricated inorganic ferroelectric-gate thin film transistors (FGTs) using only a chemical solution deposition (CSD) process. All layers, including the channel [indium-tin-oxide (ITO)], ferroelectric-gate insulator [Pb (Zr,Ti) O3], gate electrode (LaNiO3) and source/drain electrodes (ITO), were formed by the CSD process. The fabricated FGT exhibited typical n-channel transistor operation with good saturation in drain current and drain voltage (ID - VD) characteristics. The obtained on/off current ratio, memory window, and subthreshold voltage swing were about 107, 2.5 V, and 420 mV/decade, respectively. © 2010 American Institute of Physics.