Growth and polarization features of highly (100) oriented Pb(Zr0.53Ti0.47)O3 films on Si with ultrathin SiO2 buffer layer

Abstract

Highly (100) oriented Pb(Zr0.53Ti0.47)O3 (PZT) films were prepared on Si substrates with ultrathin SiO2 buffer layer by pulsed laser deposition. Hysteresis measurements show that saturation polarization, remnant polarization and coercive field of the films reach 26μC/cm2, 10μC/cm2 and 70 kV/cm, respectively. The thickness of SiO2 buffer layer is found to play a significant role on phase purity and orientation of PZT as well as the prevention of interdiffusion. It is also found that the grain size and the interdiffusion between PZT and Si are the key factors for the ferroelectric properties of the films, which are discussed together with the synthesis condition in detail. © 1998 American Institute of Physics.