Structural Characterization of Amorphous GexSe100-x by Infrared and Raman Spectroscopy

Abstract

Amorphous chalcogenides are usually prepared in two ways: as bulk glasses by quenching from the melt or as thin films by thermal evaporation. A difference in structure between thin films prepared by thermal evaporation and bulk glasses was demonstrated experimentally. Tanaka and coworkers [1] found for the Ge-S system relatively large differences between bulk materials and evaporated films. They concluded that the films contain more homopolar and dangling bonds.