Spin-charge coupled transport in van der Waals systems with random tunneling

Abstract

We study the electron and spin transport in a van der Waals system formed by one layer with strong spin-orbit coupling and a second layer without spin-orbit coupling, in the regime when the interlayer tunneling is random. We find that in the layer without intrinsic spin-orbit coupling, spin-charge coupled transport can be induced by two distinct mechanisms. First, the gapless diffusion modes of the two isolated layers hybridize in the presence of tunneling, which constitutes a source of spin-charge coupled transport in the second layer. Second, the random tunneling introduces spin-orbit coupling in the effective disorder-averaged single-particle Hamiltonian of the second layer. This results in nontrivial spin transport and, for sufficiently strong tunneling, in spin-charge coupling. As an example, we consider a van der Waals system formed by a two-dimensional electron gas (2DEG) - such as graphene - and the surface of a topological insulator (TI) and show that the proximity of the TI induces a coupling of the spin and charge transport in the 2DEG. In addition, we show that such coupling can be tuned by varying the doping of the TI's surface. We then obtain, for a simple geometry, the current-induced nonequilibrium spin accumulation (Edelstein effect) caused in the 2DEG by the coupling of charge and spin transport.