Publisher’s note: Electronic growth of Pb islands on Si(111) at low temperature [Phys. Rev. B 65, 245401 (2002)]

S. H. Chang; W. B. Su; W. B. Jian; C. S. Chang; L. J. Chen; Tien T. Tsong

Journal ArticleOPEN ACCESS

Publisher’s note: Electronic growth of Pb islands on Si(111) at low temperature [Phys. Rev. B 65, 245401 (2002)]

Chang S
Su W
Jian W
et al.

Physical Review B - Condensed Matter and Materials Physics (2002) 66(3) 1-1

DOI: 10.1103/PhysRevB.66.039901

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Abstract

This paper was published on 28 May 2002 with incorrect affiliations for the six authors. This oversight has been corrected as of 3 June 2002. The article is correct in the printed journal. © 2002 The American Physical Society.

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Chang, S. H., Su, W. B., Jian, W. B., Chang, C. S., Chen, L. J., & Tsong, T. T. (2002). Publisher’s note: Electronic growth of Pb islands on Si(111) at low temperature [Phys. Rev. B 65, 245401 (2002)]. Physical Review B - Condensed Matter and Materials Physics, 66(3), 1–1. https://doi.org/10.1103/PhysRevB.66.039901

Publisher’s note: Electronic growth of Pb islands on Si(111) at low temperature [Phys. Rev. B 65, 245401 (2002)]

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