Abstract
In this study, V2O5 and Sm2O3 thin films have been successfully fabricated for application in resistive random access memory (RRAM). The RRAMs with V2O5 and Sm2O3 films have shown bipolar switching characteristics. Introducing a suitable oxygen concentration in the V2O5 film can improve the switching performance. Postannealing of the V2O5/Sm2O3/TiN/ SiO2/Si device can decrease the forming voltage to 1.1 V.
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Lin, J. Y., Wu, K. Y., Chen, K. H., Cheng, C. M., & Li, C. Y. (2018). Bipolar switching properties of bilayer V2O5/Sm2O3 thin-film resistive random access memory device prepared by sputtering technology. Sensors and Materials, 30(4), 933–938. https://doi.org/10.18494/SAM.2018.1796
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