Abstract
We are presenting some physical and chemical basis of ammonothermal method of bulk gallium nitride synthesis in ammonobasic route. Excellent structural and wide spectrum of electrical parameters of truly bulk GaN crystals obtained in this way are revealed. In considered crystals a low dislocation density (5 × 103 cm-2) is attainable. At the same time the crystal lattice is extremely flat and the (0002) rocking curve is very narrow (FWHM=16 arcsec). Both polar and nonpolar ammonothermal GaN substrates enabled to grow high optical quality, strain-free homoepitaxial layers. © 2009 Wiley-VCH Verlag GmbH & Co. KGaA.
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CITATION STYLE
Dwiliński, R., Doradziński, R., Garczyński, J., Sierzputowski, L., Kucharski, R., Rudziński, M., … Kudrawiec, R. (2009). Properties of truly bulk GaN monocrystals grown by ammonothermal method. In Physica Status Solidi (C) Current Topics in Solid State Physics (Vol. 6, pp. 2661–2664). https://doi.org/10.1002/pssc.200982582
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