Fabrication of InN/AlInN MQWs by RF-MBE

Abstract

We studied on the growth of N-polarity InN/AlInN MQWs by radio frequency plasma-assisted MBE. We found that the growth temperature greatly affected the structural properties of InN/AlInN MQWs. The growth temperature for achieving fine periodic MQWs was in the range from 550 to 580°C. By optimizing the growth conditions, we for the first time successfully fabricated InN-based MQWs with AlxIn1-xN (∼0.2 < x < ∼0.3) barrier layers. Clear satellite peaks up to the 3rd order in high resolution X-ray diffraction were observed, indicating that being fine periodic MQWs-structures with fairly fiat and sharp interfaces. Photoluminescence peaks ranging from 0.68 to 0.99 eV were observed depending on the well thickness and they were in good agreement with those estimated by simple theoretical calculation. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.