Gas pressure atmosphere annealing: A novel method for the preparation of SiC nanowires

Abstract

Silicon carbide nanowires were fabricated by gas pressure annealing of SiOC nanocomposite powders, which were synthesized by pyrolysis of a SiO2 - sucrose gel. The reaction was carried out in an atmosphere sintering furnace without any additives. The nanowires have pronounced homogenous diameters smaller than 100 nm and lengths of up to several millimetres. The X-ray diffraction pattern indicates the formation of the β-SiC phase and transmission electron microscopy analysis show the monocrystalline structure of the nanowires.