Abstract
Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed H3BO4-BCl3-ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at 1070 °C in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.
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Jin, M. S., & Kim, N. O. (2010). Photoluminescence of hexagonal boron nitride (h-BN) film. Journal of Electrical Engineering and Technology, 5(4), 637–639. https://doi.org/10.5370/JEET.2010.5.4.637
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