The way towards for ultraflat and superclean graphene

  • Zhang R
  • Li M
  • Li L
  • et al.
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Abstract

Large‐scale and high‐quality graphene have become an emerging and promising option in modern chemistry and physics due to their fascinating properties. In the past few years, there has been encouraging progress in the controlled manufacturing of large‐size single crystal graphene. Chemical vapor deposition (CVD) draws much attention because of its fine control by regulating the growth parameters. However, in the process of CVD growth and subsequent transfer, wrinkle and contamination inevitably appear, which greatly compromises the photoelectric performance of graphene and is not conducive to further application. Herein, very recent progress for ultraflat and superclean graphene is presented. First, the wrinkle and contamination in the growth and transfer process are classified, and the formation mechanism is elucidated. Then the methods of reducing wrinkle and contamination are discussed from three aspects of growth, transfer, and post‐treatment. Among them, CVD growth process is the first step to suppress contamination and wrinkle, which can be started from three important parameters in terms of catalyst, temperature, and carbon source. As for the subsequent transfer process, several new support materials and other methods including semi and dry transfer have been employed to address the concerns present for traditional PMMA material. Post‐treatment is an additional treatment strategy for residues that have been formed in growth and transfer processes. In the last section, the photoelectric properties, and applications of ultraflat and superclean graphene are discussed, posing potential in wide applications.

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Zhang, R., Li, M., Li, L., Fan, Y., Zhang, Q., Yu, G., … Hu, W. (2022). The way towards for ultraflat and superclean graphene. Nano Select, 3(3), 485–504. https://doi.org/10.1002/nano.202100217

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