The Effect of Temperature and Doping Level on the Characteristics of Piezoresistive Pressure Sensor

Abstract

Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sensors is essential to define the parameters that cause the output characteristics drift. In this study, we adopted the model of Kanda to determine the effect of the temperature and of doping level on the piezoresistivity of the Silicon monocrystal. This is to represent P(N,T) and for p-type silicon as functions of impurity concentration for different temperatures. This allows us to see the effect of temperature and doping concentration on the output characteristics of the sensor. Finally, we study the geometric influence parameters and doping on these characteristics to optimize the sensor performance. This study allows us to predict the sensor behavior against temperature and to minimize this effect by optimizing the doping concentration.