The intrinsic parameter fluctuations induced by random discrete dopants (RDD) in nano-scaled MOSFETs are studied by applying the quantum mechanical approach. The increase of effective oxide thickness (EOT) by the quantum mechanical corrections generally makes gate controllability worse. However, as far as ultra thin body (UTB) devices, the increase of EOT improves gate controllability by suppressing leakage current because it reduces electrical body thickness by the constraint of the physical body thickness.
CITATION STYLE
Ashizawa, Y., & Oka, H. (2007). Thin body effects to suppress random dopant fluctuations in nano-scaled MOSFETs. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 93–96). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_22
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