Amorphous and microcrystalline silicon

Abstract

Processes used to grow hydrogenated amorphous silicon (a-Si: H) and microcrystalline silicon (μc-Si: H) from SiH4 and H2 ∕ SiH4 glow discharge plasmas are reviewed. Differences and similarities between growth reactions of a-Si: H and μc-Si: H in a plasma and on a film-growing surface are discussed, and the process of nucleus formation followed by epitaxial-like crystal growth is explained as being unique to μc-Si: H. The application of a reaction used to determine the dangling-bond defect density in the resulting a-Si: H and μc-Si: H films is emphasized, since it can provide clues about how to improve the optoelectronic properties of those materials for device applications, especially thin-film silicon-based solar cells. solar cell Material issues related to the realization of low-cost and high-efficiency solar cells are described, and finally recent progress in this area is reviewed.