Abstract
The authors introduce some further research on the problem depicted in [1]. The transient model has been worked out to check how rapidly the temperature of the chip changes when the applied power changes abruptly This means searching for the answer: how the thermal resistance and the maximum temperature vary versus time. The simulations required using the 3-D thermal model of considered system that was used in numerical simulations and next, tested with commercial software, ANSYS 5.7 based on Finite Element Method (FEM) and additional calculations. © Springer-Verlag Berlin Heidelberg 2003.
Cite
CITATION STYLE
Langer, M., Lisik, Z., Raj, E., Kim, N. K., & Szmidt, J. (2003). Dynamic simulations for thermal analysis of mosfet IPM on IMS substrate. Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), 2658, 644–649. https://doi.org/10.1007/3-540-44862-4_69
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