Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates

27Citations
Citations of this article
28Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs film increases with lattice mismatch. We found that the peak width in x-ray diffraction is insensitive to the defect density, but critically depends on the residual lattice strain in InAs films.

Cite

CITATION STYLE

APA

Ohtake, A., Mano, T., & Sakuma, Y. (2020). Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates. Scientific Reports, 10(1). https://doi.org/10.1038/s41598-020-61527-9

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free