Abstract
We report experimental results related to the structural and electrical properties of thin SiC films. Thin carbon films with thicknesses 50 Å and 300 Å were deposited by R.F. sputtering and processed by rapid thermal annealing (RTA) for 3 min at temperatures of 800 °C and 1400 °C in a vacuum chamber at 2×10-5 Torr. The thin films properties were studied by Raman spectroscopy and electrical cross-conductance. © Published under licence by IOP Publishing Ltd.
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CITATION STYLE
Beshkova, M., Grigorov, K., Nedkov, I., Massi, M., Sismanoglu, B., Maciel, H., & Velchev, N. B. (2012). Properties of thin silicon carbide films prepared by rapid thermal annealing. In Journal of Physics: Conference Series (Vol. 356). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/356/1/012039
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