Thermal laser evaporation for the growth of oxide films

Abstract

Thermal laser evaporation (TLE) is a particularly promising technique for the growth of metal films. Here, we demonstrate that TLE is also suitable for the growth of amorphous and polycrystalline oxide films. We report on a spectrum of binary oxide films that have been deposited by laser-induced evaporation of elemental metal sources in oxygen-ozone atmospheres. The oxide deposition by TLE is accompanied by an oxidation of the elemental metal source, which systematically affects the source molecular flux. Fifteen elemental metals were successfully used as sources for oxide films grown on unheated substrates, employing one and the same laser optic. The source materials ranged from refractory metals with low vapor pressures, such as Hf, Mo, and Ru, to Zn, which readily sublimates at low temperatures. These results reveal that TLE is also well suited for the growth of ultraclean oxide films.