Magnetic tunnels junctions for all-oxide spin valves devices

Abstract

We have developed La0.7Sr0.3MnO3 (LSMO) based spin valve tunnel junctions where the hard layer is composed of Ru doped La0.7Sr0.3MnO3 (LSMRO). These perovskite oxide layers have been grown on SrTiO3 by pulsed laser deposition. X ray diffraction, transmission electron microscopy and atomic force microscope measurements show the crystalline quality of the La0.7Sr 0.3MnO3 and La0.7Sr0.3MnO 3 doped Ruthenium thin films. Magnetization, resistance and noise characterisation of these layers are presented. The doping of Ruthenium increases the coercitive field of the La0.7Sr0.3MnO 3 but degrades the metallic properties of the layer and leads to a noise increase of one order of magnitude. We have studied the magnetoresistance and magneto-transport properties of LSMO /STO/ LSMRO-based junctions which show the importance of the interfaces quality.