Abstract
We clarify the mechanism of single electron hopping and demonstrate single electron ocsillation via Si-dot, using a high-presice general-puprpuse device-simulator.
Cite
CITATION STYLE
APA
Watanabe, H. (2007). Hopping transport of electrons via Si-Dot. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 249–252). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_59
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
Already have an account? Sign in
Sign up for free