A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection over the Schottky barriers. This current is separated into a field emission current, given by charge carriers tunneling through the Schottky barriers and a thermionic emission current, given by charge carriers overcoming the Schottky barriers. The model verification is done by comparing the model results to measurements and TCAD simulations.
CITATION STYLE
Roemer, C., Darbandy, G., Schwarz, M., Trommer, J., Heinzig, A., Mikolajick, T., … Kloes, A. (2022). Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors. IEEE Journal of the Electron Devices Society, 10, 416–423. https://doi.org/10.1109/JEDS.2021.3136981
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