Charge trapping in Si-implanted SiO2-Si memory devices at high electric fields and elevated temperatures

Abstract

In the paper an influence of different electric fields and elevated temperatures on charge trapping in Si nanoclusters enriched SiO2 is considered. It is shown that in the case of the voltage applied to virgin structure, independently on the applied voltage polarity, an increase of the electric field and measurements temperature results in the appearance of similar charging effect - positive charge generation in the dioxide. Careful analysis of the obtained results allows us to conclude that this positive charge generation on its first stage can be associated with the electron field emission from the electrically neutral Si nanoclusters. Study of the temperature dependence of charge relaxation connected with the electron emission from Si nanoclusters allows us to determine a band gap (near 1.50 eV) and size (near 3.5 nm) of Si nanoclusters imbedded in the SiO2 by high-dose Si + ion implantation. © 2005 IOP Publishing Ltd.