Prospects and issues of Diamond based IMPATT Diode at MM-Wave Frequency

Abstract

We have studied the dc and small signal characteristics of diamond based IMPATT diode at MM-wave frequency. The simulation is carried out to obtain the various device parameters like breakdown voltage, efficiency and RF power etc. of diamond IMPATT device operating at 94 GHz atmospheric window frequency and the results are compared with Ge, Si, GaAs, SiC and GaN based diode. The results show that diamond based IMPATT is capable of delivering a peak RF power output of 1.5 Watt with 10% efficiency and which is higher than all the conventional materials along with SiC and GaN at the same frequency of operation.