Studies on n-type a-si:H and the influence of ito deposition process on silicon heterojunction solar cells

Abstract

The process parameters and the properties of each layer of n-type a-Si:H/ c-Si heterojunction solar cell is discussed. The n-type a-Si:H was deposited by rf PECVD by varying the gas mixture ratios, and the activation energy was estimated form the temperature dependent conductivity measurements. We have found that sputtering of ITO damages the interface passivation of a-Si:H/c-Si and a post deposition annealing was necessary to regain the life time. Silicon heterojunction solar cell with laser fired rear contacts has been fabricated showing an implied VOC of 670 mV.