Nanocrystalline diamond films have been successfully synthesized on plastic substrates at substrate temperatures below 100°C using a microwave plasma chemical-vapor deposition technique. This has been realized by using low reaction-gas pressures and a surface-wave plasma with a low-electron temperature over the growth region. The nanocrystalline diamond films exhibit growth rates with much lower temperature dependence than conventional diamond growth and decreasing nucleation rates with increasing substrate temperatures. These phenomena imply a different growth mechanism from conventional diamond syntheses. In addition, our analysis on the crystal size distribution of the nanocrystalline diamond film indicates the possibility of diamond nucleation in a stable phase in the plasma. The gas-phase nucleation, invoked by the low-electron temperature of the surface-wave plasma, well explains the low-temperature growth and the temperature dependences of the growth rate and the nucleation rate. © 2010 The American Physical Society.
CITATION STYLE
Tsugawa, K., Ishihara, M., Kim, J., Koga, Y., & Hasegawa, M. (2010). Nanocrystalline diamond film growth on plastic substrates at temperatures below 100°C from low-temperature plasma. Physical Review B - Condensed Matter and Materials Physics, 82(12). https://doi.org/10.1103/PhysRevB.82.125460
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