Comparative hydrogen sensing performances of Pd– and Pt–InGaP metal–oxide–semiconductor Schottky diodes

Abstract

The hydrogen sensing performances of Pd– and Pt–InGaP metal–oxide–semiconductor (MOS) Schottky diodes are systematically studied and compared under different operating temperature. It is known that, from experimental results, the Pd–InGaP MOS Schottky diode exhibits higher hydrogen detecting capability at lower hydrogen concentration regimes. On the contrary, the MOS Schottky diode with Pt catalytic material shows better hydrogen detecting capability and higher operating temperature. It is believed that the refractory Pt metal is responsible for detecting high hydrogen concentration in air, especially at high operating temperature. Furthermore, the temperature dependence of equilibrium constants is investigated and reported. In order to study the steady-state reaction kinetics, the van’t Hoff equation is used to estimate the values of initial heat of adsorption for both devices. Based on the Temkin isotherm model, the experimental results and theoretical simulation of hydrogen coverage are also studied and compared.