The role of carbon in ion beam nano-patterning of silicon

Abstract

We report a comparative study of nano-pattern formations on a carbon film and a smooth Si(100) surface following inert and chemically active ion bombardment. For the case of carbon film, patterns could be formed both by inert (Ar+) and self (C+) ion bombardment with the former producing ripples at relatively lower fluence. In contrast, bombardment by inert Ar+ failed to form the nano patterns on Si surface, while bombardment by the same energy C+ generated the ripples. Thus, impurity induced chemical effect seems to be crucial rather than the Bradley-Harper or Carter-Vishnyakov effects for destabilizing the surface for ripple formation. © 2013 AIP Publishing LLC.