Abstract
A parallel 3D Monte Carlo simulator for the modelling of electron transport in nano-MOSFETs using the Finite Element Method to solve Poisson equation is presented. The solver is parallelised using a domain decomposition strategy, whereas the MC is parallelised using an approach based on the distribution of the particles among processors. We have obtained a very good scalability thanks to the Finite Element solver, the most computationally intensive stage in self-consistent simulations. The parallel simulator has been tested by modelling the electron transport at equilibrium in a 4 nm gate length double gate MOSFET. © 2008 Springer.
Cite
CITATION STYLE
Aldegunde, M., García-Loureiro, A. J., & Kalna, K. (2008). Development of a 3D parallel finite element Monte Carlo simulator for nano-MOSFETs. In Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) (Vol. 4818 LNCS, pp. 115–122). https://doi.org/10.1007/978-3-540-78827-0_11
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
