High-frequency scalable compact modelling of Si RF-CMOS technology

Abstract

The aggressive downscaling of CMOS technologies offers record transit frequencies well above 100 GHz. Efficient RF circuit design, employing such technologies, demands nonlinear, scalable compact models with high accuracy up to high frequencies. EKV3 is an advanced MOSFET model, based on charge sheet theory, that meets such demands. Within this paper, the model is validated against DC and RF measurements up to 30 GHz, for various devices of a modern 180 nm CMOS technology. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.