Correlation between stoichiometry, strain, and metal-insulator transitions of NdNiO3 films

Abstract

The interplay of film stoichiometry and strain on the metal-insulator transition (MIT) and Hall coefficient of NdNiO3 films grown under different conditions is investigated. Unstrained lattice parameters and lattice mismatch strains are evaluated for films grown under a range of growth pressures and on different substrates. It is shown that both the temperature of the MIT and the Hall coefficient in the metallic phase are highly sensitive to film strain. In films grown with lower oxygen/total growth pressures, very large compressive in-plane strains can be obtained, which can act to suppress the MIT. Both the Hall coefficient and the temperature of the MIT are relatively insensitive to growth pressure, provided that films under the same strain are compared. The results support an itinerant picture of the transition that is controlled by the Ni eg bands, and that is relatively insensitive to changes in film stoichiometry.