FeRAM

Abstract

Ferroelectric materials show spontaneous polarization; FeRAM utilizes the positive and negative polarization direction corresponding to “1” and “0” states for stored data. The basic idea behind FeRAM appeared in 1963 [1] and 1988 [2], however, there have been many scientific and technical improvements needed to convert FeRAM technology into manufactured devices and still further improvements in materials, process fabrication, and circuit architecture are required for further device scaling. This chapter intends to serve as a review primarily focusing on the timeframe from 2000 to 2007. Previously, circuit and architecture of FeRAM devices regarding circuit innovations up to 2000 was summarized by Prof.