In this chapter, we review some of the most recent results in these areas and put them in a unified context that covers a very wide range, from materials to system design. The first section presents a top-down silicon nanowire fabrication platform for high-mobility gate-all-around (GAA) MOSFETs and impact-ionization devices. Ferroelectric FET with sub-100-nm copolymer P(VDF-TrFE) gate dielectric are examined in the next section for nonvolatile memory applications, which is a very promising direction toward future high-density memory arrays, followed by a discussion of materials for piezoelectric nanodevices in the last section. © Springer Science+Business Media LLC 2009.
CITATION STYLE
Bouvet, D., Forró, L., Ionescu, A. M., Leblebici, Y., Magrez, A., Moselund, K. E., … Stolitchnov, I. (2009). Materials and devices for nanoelectronic systems beyond ultimately scaled CMOS. In Nanosystems Design and Technology (pp. 23–44). Springer US. https://doi.org/10.1007/978-1-4419-0255-9_2
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