Growth mechanisms and diffusion in multinary and multilayer chalcopyrite thin films

Abstract

Multisource physical vapor deposition does not only provide the possibility to grow homogeneous multinary films but can also act as a tool for analyzing the growth process and for the interactions of different phases. The present level ofknowledge about growth interfaces is reported. Different approaches for studying the growth of films are described inthis contribution namely growth of films with excess Cu, CuInSe2/CuGaSe2 multilayers and growth of CuIn(Se, S)2 atdifferent Cu/In ratios. © 1993 The Japan Society of Applied Physics.