Abstract
The compact double-gate MOSFET model HiSIM-DG considering the volume inversion effects is developed solving the Poisson equation iteratively including bulk charge. The developed model reproduces the bias dependence of not only the surface but also the center potential of the silicon layer. The model proves accurate dependence of silicon layer thickness in comparison to the 2 dimensional device simulation results. It is observed that the volume inversion effect prevents devices from performance degradation for a reduction of device sizes.
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CITATION STYLE
Sadachika, N., Oka, H., Tanabe, R., Murakami, T., Mattausch, H. J., & Miura-Mattausch, M. (2007). Compact double-gate MOSFET model correctly predicting volume-inversion effects. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 289–292). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_69
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