Optimization of Zn2SiO4 Anode Structure for Deep Ultraviolet Generation with Carbon Nanotube Emitters

Abstract

Ultraviolet (UV) light is applied to various industrial and medical devices. In particular, deep UV light with short wavelengths could minimize the damage to human cells when it is used to virus and bacterial sterilization. We optimized the Zn2SiO4 anode structure to improve deep UV light generation with a carbon nanotube (CNT) cold cathode based electron beam (C-beam) pumping. Annealing at 1000 °C and 400 mTorr produces anode with the highest deep UV intensity. Using a 100-nm SiOx layer between Zn2SiO4 and quartz substrate, the intensity of deep UV light at a wavelength of 226 nm was increased by 1.8 times.