Abstract
The present invention is directed to a CMOS sensor. A Substrate has a metal-oxide Semiconductor. The metal-oxide Semiconductor has a gate and a Source/drain region in the Substrate. A dummy Shield layer is over a part of the Substrate. A Sensor region is in the Substrate with one end extended from a part of the Source/drain region and the other end adjacent to the part of the Substrate under the dummy shield layer.
Cite
CITATION STYLE
APA
CMOS Sensor. (2009). In Encyclopedia of Biometrics (pp. 182–182). Springer US. https://doi.org/10.1007/978-0-387-73003-5_760
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