Reactor materials for high purity HVPE GaN growth: A thermodynamic analysis

Abstract

The chemical resistance of quartz, aluminum oxide, boron nitride, molybdenum, and platinum in the environment of the hydride vapor phase epitaxy of gallium nitride was estimated by chemical equilibrium calculation. The interaction of materials with hydrogen, hydrogen chloride, chlorine, ammonia, and gallium chlorides was analyzed. The conditions in which the use of each material is permissible were determined.