Hot carrier effects in AlGaAs/InGaAs high electron mobility transistors: Failure mechanisms induced by hot carrier testing

Abstract

A new failure mechanism of AlGaAs/InGaAs pseudomorphic high electron mobility transistors has been observed after hot carrier dc accelerated testing. Hot carrier effects have been characterized by means of gate current measurements and electroluminescence spectroscopy. After accelerated testing, a permanent degradation has been found, consisting of the decrease of drain current ID, and of the absolute value of the pinch-off voltage Vp, at low drain-source voltage VDS, resulting in the development of a remarkable "kink" in the output characteristics. Direct current, pulsed, and low-frequency ac measurements demonstrate that the failure mechanism consists of the creation of deep levels under the gate which act as electron traps at low gate-to-drain electric fields. Deep level transient spectroscopy and photoinjection measurements reveal the presence of two levels at 0.77 eV and 1.22 eV. The intensity of the 1.22 eV peak is correlated with the degradation observed in stressed devices. © 1997 American Institute of Physics.