Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films

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Abstract

Thin films of copper Indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at temperature, 60°C. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out and discussed. Characterization Included X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX) and absorption spectroscopy. The results are discussed and interpreted. © Indian Academy of Sciences.

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Bari, R. H., Patil, L. A., & Patil, P. P. (2006). Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films. Bulletin of Materials Science, 29(5), 529–534. https://doi.org/10.1007/BF02914085

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