Research on the Metasurface for Single-Photon Avalanche Photodiode

Abstract

As the core device of the quantum information field, the single photon avalanche photodiode (SPAD) is a solid-state single photon detector with a pico-second level time-resolution, low bias voltage, high signal-to-noise ratio, and a low cost. However, the photon detection efficiency (PDE) of SPAD is not ideal. The traditional method is to optimize the device structure, while the dark count or time resolution characteristics of the device might be sacrificed. The metasurface integrated on SPADs provides a novel approach to achieving higher PDE. As a result, the SPAD device structure could be independently designed to realize a low dark count rate and a good time resolution. In this paper, many kinds of metasurface structures that could enhance the incident photons absorption, are analyzed. Those structures compatible with CMOS or other easily mass produced processes are attractive for revolutionary changes to conventional SPAD. As a result, a metasurface integrated SPAD would greatly push its applications in the field of quantum information, single photons imaging, life medicine, and other low-level light detections.