Influence of Fermi-level pinning on barrier height inhomogeneity in PtSi/p-Si Schottky contacts

Abstract

The barrier height inhomogeneity in PtSi/p-Si and IrSi/p-Si was observed by internal photoemission. New Fowler equations were introduced, to analyze the observed properties. Two regions with different barrier heights were assumed to coexist, and the individual barrier heights were evaluated. One of two barrier heights was consistent with the generally obtained value in individual contacts. The other was 0.39 eV in both contacts. The origin of two regions was explained in terms of Fermi-level pinning.