Estimating the intensity of germ-grain models with overlapping grains

Abstract

Formulas are derived for the spherical contact distribution of a planar germ-grain model Z with circular grains where the germs formeither a 'segment cluster' process or a 'line-based' Poisson point process. They are used in order to estimate the intensity λ of the germprocess by means of the spherical contact distribution function. As an application the number of dislocations on a silicon wafer is estimated.