Abstract
A structure for a GaSb-VCSEL device using a buried tunnel-junction (BTJ) and a hybrid dielectric/gold DBR mirror is investigated. The BTJ approach combines several advantages such as reduced intravalence-band absorption, low ohmic losses and an efficient thermal management of the laser diode, which are crucial for roomtemperature operation of the device. First results have shown resonant electroluminescence, but due to a misaligned cavity no laser operation was achieved.
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CITATION STYLE
Dier, O., Lauer, C., Bachmann, A., Lim, T., Kashani, K., & Amann, M.-C. (2008). Electroluminescence From Electrically Pumped GaSb-Based VCSELs. In Narrow Gap Semiconductors 2007 (pp. 139–141). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8425-6_33
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