Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio

Abstract

Gate-all-around (GAA) field effect transistors (FETs) have appeared as one of the potential candidates for the electrostatic integrity required to reduce MOSFETs to minimum channel lengths. Meanwhile, the negative capacitance effect of ferroelectrics is known as a remarkable quality enhancer for MOSFETs in terms of reducing sub-threshold slope (SS), supply voltage, and power consumption by utilizing the gate voltage amplification phenomenon. In this work, combining these two phenomena we numerically design a cylindrical GAA NCFET where promising two-dimensional WSe2 is used as a channel material. We have suggested a high-K dielectric consisting of a tri-layer HfO2/TiO2/HfO2 and lead zirconate titanate (PZT) as a ferroelectric layer in the gate stacking. The extremely high Ion/Ioff ratio on the order of 1012 (six order higher than conventional FET), and the high on-state current of 119 µA are the most remarkable findings of this device which exceeds all the earlier results. The integration of the NC effect utilizing a 20 nm PZT offers lowest SS of 18.9 mV/dec. Moreover, a large transconductance (gm) of 117 µS and a higher current cut-off frequency (fT) of 335 GHz were reported from the output characteristics. These outcomes allude that the suggested device structure may create a new path for electronic devices; therefore, it can be used for high speed operation with low power consumption.